Abstract
<jats:p>The next generation of nanosheet-based semiconductor devices marks a pivotal evolution in modern electronics, as industry and research converge to address the scaling limitations of traditional FinFET architectures. Nanosheets, with their enhanced electrostatic control and high on-off current ratios, are emerging as the cornerstone of advanced semiconductor technologies. This chapter explores the advancements in nanosheet transistor design, materials innovation, with an emphasis on their scalability beyond 3nm technology nodes. Furthermore, the discussion extends to device reliability, energy efficiency, and potential applications in artificial intelligence (AI), high-performance computing, and edge devices. By delving into the synergistic collaboration between process technology and device architecture, this chapter underscores the transformative role of nanosheet technologies in shaping the future of semiconductor devices and redefining the boundaries of Moore's Law.</jats:p>