Defect-engineering driven imprint enables low-power and high-endurance of antiferroelectric Hf0.3Zr0.7O2 ultra-thin films for nonvolatile memories

Authors: Hyun Woo Jeong, Yong Hyeon Cho, Jaewook Lee et al.
Publication: Journal of Materials Science & Technology
Published: Dec 1, 2026
Source: Crossref
Back to Search View Original Cite This Article

Related Articles

Comparing and Prioritizing Different Methods of Collection and Decontamination of Waste in Decentralized Healthcare Centers

Fatemeh Ostadi, Fatemeh Mortezazadeh et al. - Oct 2121

Read More
Studying the Effluent Quality of Enhanced Modified Ludzack Ettinger-oxic Settling Anaerobic Process (E-MLE-OSA) for Treating Real Municipal Wastewater

Behzad Nikpour, Reza Jalilzadeh Yengejeh et al. - Oct 2121

Read More
A Simplified Approach to Evaluate Retinal Blue Light Hazard Using the Correlated Color Temperature of LED Light Sources

Farough Mohammadian, Ahmad Mehri et al. - Oct 2121

Read More
Investigating the Non-carcinogenic Risk and Hazard Quotient of Heavy Metals in High-traffic Districts of Tehran Metropolis, Iran

Azam Mahdipour, Mojgan Zaeimdar et al. - Oct 2121

Read More
Investigation and Optimization of Air Pollution Risk by a Multi-criteria Decision Making Method Using Fuzzy TOPSIS: A Case Study of Construction Workers

Eghbal Sekhavati, Reza Jalilzadeh Yengejeh - Oct 2121

Read More